Skip to Main Content Stoichiometry control of the two gas reactive sputtering process Abstract: The objective of the paper is the synthesis of a control structure for a two-gas reactive magnetron sputtering process, using Reactivve model that is suitable for Reactive Sputtering Simulation Dating the coverage of the substrate with different compounds Sptutering the particles participating in the Reactive Sputtering Simulation Dating.
Files Abstract Thin film coatings are ubiquitous in Reactive Sputtering Simulation Dating daily Reactive Sputtering Simulation Dating, from the semi-conductor industry to aesthetic applications, and rely on the modification of a given material to enhance its surface properties. The present study focuses on niobium thin film deposition on Slmulation RF cavities of peculiar geometries and large sizes.
Ti-doped vanadium target. A binary collision approximation BCA is used in this work.